国家/地区 美国（14） 韩国（12） 欧洲专利局（EPO）（8） 日本（8） 中国（7） 世界知识产权组织（7） 德国（3） 俄罗斯（2）
IPC部 B（17） C（12） H（9）
G（4）
IPC大类 B82（17）
IPC小类 B82Y（11） C01B（9） B82B（8）
B32B（6） H01L（6） B01J（4）
B05D（4） H01B（4） C23C（2）
C30B（2） G01N（2）
IPC B82Y030/00（8） C01B031/04（7） B82B003/00（6）
C01B031/02（6） B82Y040/00（5） B82B001/00（4）
C01B031/00（4） B32B009/00（3） H01L029/16（3）
B01J021/18（2） B05D003/02（2） B82Y015/00（2）
C01B032/20（2） C23C016/26（2） G01N027/414（2）
发明人 CHOI J（4） CHOI J Y（4） SHIN H（4）
SHIN H J（4） YOON S（4） YOON S M（4）
HONG J H（2） HONG S（2） HUN HONG J（2）
JIN KIM S（2） JUNG Y（2） KIM S（2）
公开年 2009（11） 2010（5）
申请年 2008（17）
专利权人 SAMSUNG ELEC.（4） UNIV EWHA IN.（2） UNIV SEOUL N.（2）

Unipolar hetero-junction depletion-layer transistor for use in high frequency circuit utilized for e.g. wireless communication, has tunnel diode permitting current of carriers in direction of collector, where base includes graphene layer.

LIPPERT G, MEHR W

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Device, useful for detecting chemical compound and optionally quantifying many gaseous chemical compounds e.g. hydrogen and carbon monooxide, comprises carbon nanotube in layers of graphene, on which molecule is grafted.

MAYNELHERMITE M, PALACIN S, CHENEVIER P, CHANCOLON J, GOHIER A, MAYNEL HERMITE M, MAYNE L H M

Graphene nanostructure solution manufacturing method for manufacturing graphene nano device utilized in semiconductor device, involves forming solution having graphene nanostructures by dispersing graphene nanostructure in solvent.

HONG S, KOH J

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Multi layer graphene hollow nanosphere manufacturing method for carbon nanotube, involves placing metal/metal oxide nanoparticle in acid solution, and heating metal oxide/silica composite nanoparticle with polysaccharide dispersed solution.

HONG J H, JUNG Y, KIM S, JIN KIM S, HUN HONG J

Multilayered hollow nanographene for use in light-emitting optical structure, is formed by graphene layers, where outer surface of nanographene includes organometallic carbide and inner surface includes hydroxyl group.

HONG J H, JUNG Y, KIM S, JIN KIM S, HUN HONG J

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z

Preparation of graphene or graphene dispersion used for manufacturing paper, film, composite and articles for nanoelectronics, nanocomposites and batteries, involves reducing purified exfoliated graphite oxide in presence of base.

LI D, WALLACE G G